ISL9V5036P3_F085【PDF 2/8 页】IGBT N-CH 360V 46A TO-220AA-3

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Package Marking and Ordering Information

Device Marking

V5036S

V5036P

V5036S

V5036S

Device

ISL9V5036S3ST

ISL9V5036P3

ISL9V5036S3

ISL9V5036S3S

Package

TO-263AB

TO-220AA

TO-262AA

TO-263AB

Reel Size

330mm

Tube

Tube

Tube

Tape Width

24mm

N/A

N/A

N/A

Quantity

800

50

50

50

Electrical Characteristics T A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off State Characteristics

BV CER

Collector to Emitter Breakdown Voltage

I C = 2mA, V GE = 0,

R G = 1K ?, See Fig. 15

330

360

390

V

T J = -40 to 150°C

BV CES

Collector to Emitter Breakdown Voltage

I C = 10mA, V GE = 0,

R G = 0 , See Fig. 15

360

390

420

V

T J = -40 to 150°C

BV ECS

Emitter to Collector Breakdown Voltage

I C = -75mA, V GE = 0V,

30

-

-

V

T C = 25°C

BV GES

Gate to Emitter Breakdown Voltage

I GES = ± 2mA

±12

±14

-

V

I CER

Collector to Emitter Leakage Current

V CER = 250V,

R G = 1K ?,

See Fig. 11

T C = 25°C

T C = 150°C

-

-

-

-

25

1

μA

mA

I ECS

R 1

R 2

Emitter to Collector Leakage Current

Series Gate Resistance

Gate to Emitter Resistance

V EC = 24V, See T C = 25°C

Fig. 11

T C = 150°C

-

-

-

10K

-

-

75

-

1

40

-

30K

mA

mA

?

?

On State Characteristics

V CE(SAT)

Collector to Emitter Saturation Voltage

I C = 10A,

T C = 25°C,

-

1.17

1.60

V

V GE = 4.0V

See Fig. 4

V CE(SAT)

Collector to Emitter Saturation Voltage

I C = 15A,

T C = 150°C

-

1.50

1.80

V

V GE = 4.5V

Dynamic Characteristics

Q G(ON)

Gate Charge

I C = 10A, V CE = 12V,

-

32

-

nC

V GE = 5V, See Fig. 14

V GE(TH)

V GEP

Gate to Emitter Threshold Voltage

Gate to Emitter Plateau Voltage

I C = 1.0mA,

V CE = V GE,

See Fig. 10

I C = 10A,

T C = 25°C

T C = 150°C

V CE = 12V

1.3

0.75

-

-

-

3.0

2.2

1.8

-

V

V

V

Switching Characteristics

t d(ON)R

t rR

t d(OFF)L

t fL

SCIS

Current Turn-On Delay Time-Resistive

Current Rise Time-Resistive

Current Turn-Off Delay Time-Inductive

Current Fall Time-Inductive

Self Clamped Inductive Switching

V CE = 14V, R L = 1 ?,

V GE = 5V, R G = 1K ?

T J = 25°C, See Fig. 12

V CE = 300V, L = 2mH ,

V GE = 5V, R G = 1K ?

T J = 25°C, See Fig. 12

T J = 25°C, L = 670 μ H,

R G = 1K ?, V GE = 5V, See

-

-

-

-

-

0.7

2.1

10.8

2.8

-

4

7

15

15

500

μs

μs

μs

μs

mJ

Fig. 1 & 2

Thermal Characteristics

R θ JC

Thermal Resistance Junction-Case

TO-263, TO-220, TO-262

-

-

0.6

°C/W

?2009 Fairchild Semiconductor Corporation

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009

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